Confinement effects on decay rate of surface electron states over liquid helium

Электроны над жидким гелием

Автор(и)

  • S.S. Sokolov B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine 47 Lenin Ave., Kharkov 61103, Ukraine
  • J.M. Villas-Bôoas Walter Schottky Institut, Technische Universität München, Am Coulombwall, D-85748 Garching, Germany
  • Yu.P. Monarkha B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine 47 Lenin Ave., Kharkov 61103, Ukraine
  • Nelson Studart Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, São Paulo, Brazil

DOI (Low Temperature Physics):


https://doi.org/10.1063/1.2913001

Ключові слова:

quantum dot, two-ripplon process, lifetime of excited states.

Анотація

The decay rate of excited states of surface electrons in liquid helium, trapped in a quantum dot system, is evaluated, taking into account the process of spontaneous radiation of two-ripplons with short wavelength. We find that the values of the decay rate in later process are rather higher than those for the one-ripplon process previously calculated. The upper-bound limit lifetime of excited states of surface electrons in a quantum dot is found to be t < 10-6–10-7 s.

Завантаження

Дані завантаження ще не доступні.

Downloads

Опубліковано

2008-03-17

Як цитувати

(1)
S.S. Sokolov, J.M. Villas-B&ocirc;oas, Yu.P. Monarkha, and Nelson Studart, Confinement effects on decay rate of surface electron states over liquid helium: Электроны над жидким гелием, Low Temp. Phys. 34, (2008) [Fiz. Nizk. Temp. 34, 480-483, (2008)] DOI: https://doi.org/10.1063/1.2913001.

Номер

Том 34 № 4-5 (2008)

Розділ

Статті

Статті цього автора (авторів), які найбільше читають

<< < 1 2 3 4 5 6 > >>