Theoretical analysis of the kinetics of low-temperature defect recombination in alkali halide crystals

Автор(и)

  • V.N. Kuzovkov Institute of Solid State Physics, 8 Kengaraga Str., Riga LV 1063, Latvia
  • A.I. Popov Institute of Solid State Physics, 8 Kengaraga Str., Riga LV 1063, Latvia
  • E.A. Kotomin Institute of Solid State Physics, 8 Kengaraga Str., Riga LV 1063, Latvia
  • A.M. Moskina Institute of Solid State Physics, 8 Kengaraga Str., Riga LV 1063, Latvia
  • E. Vasil`chenko Institute of Physics, University of Tartu, 1 W. Ostwald Str., Tartu 50411, Estonia
  • A. Lushchik Institute of Physics, University of Tartu, 1 W. Ostwald Str., Tartu 50411, Estonia

DOI (Low Temperature Physics):


https://doi.org/10.1063/1.4959018%20

Ключові слова:

alkali halides; defect; diffusion; reaction; ionizing radiation.

Анотація

We analyzed carefully the experimental kinetics of the low-temperature diffusion-controlled F, H center re-combination in a series of irradiated alkali halides and extracted the migration energies and pre-exponential parameters for the hole H centers. The migration energy for the complementary electronic F centers in NaCl was obtained from the colloid formation kinetics observed above room temperature. The obtained parameters were compared with data available from the literature.

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Опубліковано

2016-05-18

Як цитувати

(1)
V.N. Kuzovkov, A.I. Popov, E.A. Kotomin, A.M. Moskina, E. Vasil`chenko, and A. Lushchik, Theoretical analysis of the kinetics of low-temperature defect recombination in alkali halide crystals, Low Temp. Phys. 42, (2016) [Fiz. Nizk. Temp. 42, 748-755, (2016)] DOI: https://doi.org/10.1063/1.4959018 .

Номер

Том 42 № 7 (2016)

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