Belevskii PA, Vinoslavskii MN, Vainberg VV, Pylypchuk OS, Poroshin VN. Resistive switching effect in the n-InGaAs/GaAs heterostructures with double tunnel-coupled quantum wells. Fiz. Nyzk. Temp. [інтернет]. 17, Грудень 2021 [цит. за 11, Листопад 2025];48(2):176-80. доступний у: http://80.92.230.95/index.php/fnt/article/view/f48-0176e